A STUDY OF THE CARBON CONTENT IN SOL-GEL SILICAFILMS,

K.V. Zinoviev, CICATA-IPN, Legaria 694, Col. Irrigacion, 11500 Mexico, D.F., Mexico, V.V. Vasiliev, V.S. Pantuev, Materials Research Institute, 103498, Moscow, Russia.

A possibility of a minimization of a carbon content in sol-gel silicafilms used in microelectronics is studied. The films were deposited from water-organic solutions of a tetraethoxysilan on silicon wafers by spin-on method with a subsequent heat treatment. The effects of a solution composition and forming conditions of the films on the carbon content have been studied. A composition of hydrolysis products was defined by the gas chromatography in the solution and by catalytic oxyding in a dry residue. The carbon content in the films was defined by the carbon isotope C-14. It was found that it is possible to ensure a minimum content of the carbon in silicafilms (0.01%) when the solutions of tetraethoxysilan in ethanol with an excess of water are used, the films, at an increased relative humidity, ere deposited and the heat treatment of the films at the temperature more than 700°C in oxidizing atmosphere is performed.