G. Reyna¹, M. García², M. Aguilar¹ and C. Falcony¹

1Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740, 07000 México, D.F.,México. ²IIM., UNAM, Coyoacan 04510, México D.F., México

The synthesis and study of ZrO₂ thin films deposited on monocrystalline silicon substrates are presented. These films were obtained from Zr(C₅H₇O₂)₄ as source material and C₃H₇N) as solvent. The substrate temperature was changed. Optical characterization involves Infrared and UV-Vis spectroscopies and Ellipsometry measurement. The structural characterization was made by means of X-ray Diffraction. Also, the Morphology and chemical composition of the films were obtained by Atomic Force Microscopy and EDS, respectively.