CdSe THIN FILMS GROWN BY CHEMICAL BATH AT LOW TEMPERATURES
J. A. Rivera-Márquez1, M. Rubín-Farfán1, R. Lozada-Morales1, O. Portillo-Moreno2, R. Rodríguez-Castillo2, C. Avelino-Flores2, O. Zelaya-Angel3 and L. Baños-López4.
1
Posgrado en Optoelectrónica, FCFM, Benemérita Universidad de Puebla, México.2
Fac. de Ciencias Químicas, Benemérita Universidad Autónoma de Puebla, México.3
Departamento de Física, CINVESTAV-IPN, P.O.Box 14-740, México 07360, D.F.4
Instituto de Investigación en Materiales, UNAM, México, D.F.CdSe thin films were prepared by the chemical bath method on glass substrates at approximately 0oC. The thickness as measured by usong a profilometer was about 800 Å. The characterization of these films was carried out by means of X-ray diffraction, optical absorption and secondary electron microscopy (SEM). By employing the Debye-Scherrer formula the average grain size of films was measured and was in the range 10-50 nm. The structural crystalline phase was the hexagonal wurtzite. The optical absorption data allows to determine the energy band gap (Eg) of the layers, and we observed how the Eg shifts acoording to grain size changes. SEM images evidence the evolution of surface morphology of films.