D. R. Acosta*(dacosta@fenix.ifisicacu.unam.mx). M.Olvera**(molvera@mail.cinvestav.mx). A. Maldonado and R. Asomoza** *IFUNAM; A.P. 20-364;01000 México 9, D.F. ** CINVESTAV-IPN; A.P.14-740, 07000 México, D.F.

The structural and physical properties of CulnS₂ thin films prepared by chemical spray technique on glass substrates at different temperatures are reported in this work. The samples were prepared using aqueous solution of cooper chloride, indium chloride and thiourea. The films were grown keeping a constant temperature in the 275 – 350º C range. Structural characterization was done using X ray diffractometry. Also scanning, conventional and high resolution electron microscopy techniques were used to determine the (112) direction and polycrystalline configuration were detected for all samples. For the films obtained at the higher substrate temperatures, different polytype configurations were found. Also for this temperature a noticeable quantity of CuS₂ was observed. An increase in grain sizes was detected as the substrate temperature was rise. From electrical measurements, a p-type conductivity was detected and resistivity shows minimum values of 0.1 ohm-cm^-1 and the band gap associated to CulnS₂ presents values close to 1.45 eV, which are very near to the optimum value for the use of our ternary compound in photovoltaic conversion devices.