R.D. Gould and M. Din

Thin Films Laboratory, Department of Physics, School of Chemistry and Physics, Keele University, Keele, Staffs. ST5 5BG, U.K.

Cadmium arsenide (Cd₃As₂)is a high conductivity II-V semiconductor. Following a recent de investigation [1], capacitance has been measured as a function of film thickness, temperature (163-453 K), and frequency (100 Hz-20 kHz) in Ag-Cd₃As₂-Al structures. There was a decrease with frequency and an increase with temperature, as reported in various other materials. After annealing at 473 K the decrease in capacitance with frequency was enhanced due to concomitant changes in the equivalent circuit parameters, whereas unannealed Ag-Cd₃As₂-(Au or Ag) structures showed reduced capacitance, ascribed to changes in the contact impedance.

[1] M. Din and R.D. Gould, Thin Solid Films, 340, 28-32 (1999).