J.J. Araiza¹ and C. Falcony^1,2. ¹Physics Department, CINVESTAV-IPN. Av. I.P.N. 2508, México, D.F. 07300. ²CICATA-IPN. Av. Legaria 694, México, D.F. 11500

The results related with Y₂O₃ thin film deposition on Si substrate with reconstructed surfaces by means of sputtering etching are presented in this work. Sputtering deposition has been performed under different growing conditions to obtain amorphous thin films with and without some policrystalline component. Interface characteristics have been determined by optical and electrical measurements. The deposition conditions for a change in phase from amorphous to partially policrystalline film at low temperature has been determined. Low temperature deposition processes also results in a reduction of the SiO₂ interlayer.

This work was partially supported by CONACyT.