R. Pérez-Blanco, A. Torres-Jacome, E. Gutiérrez-Domínguez, c. Zuñiga- Islas and a. Sibaja-Hernández. Instituto Nacional de astrofísica Optica y Electrónica, Apdo. Postal 51 and 216, C.P. 72000, Puebla, Pue.

In this wok the increase in the amount of N-H bonds in silicon SiN_x films is reported as a result of the deposit conditions of the material. Silicon rich SiN_n films were PECVD deposited at 240C. The flow ratio of N2/Silane (Rx) was varied while the flow of NH3 was keep unchanged. Also the RF power was sweep in the range 300-600 W. By means of optical traansmission measurements the optical gap of the material was determined. By using IR spectroscopy the amount of Si-N and N-H bonds were estimated. An increase in the N-H bonds was observed, while the Silane flow is decreased. The authors propose that this observed increase is due to the decrease of Si-N traps.