ELECTRONIC STRUCTURE AND MORPHOLOGY OF SiC FILMS GROWN ON Si SUBSTRATE USING C60 AS PRECURSOR
C. Cepek(1), P. Schiavuta(1), M. Pedio(2) and M. Sancrotti(1).(1) Laboratorio Nazionale TASC-INFM, Padriciano 99, I34012 Trieste, Italy. (2) Instituto di Struttura della Materia-CNR, ss 14 Km. 163-5, I-34012, Trieste, Italy
We studied the interaction of C60 molecules and Si substrates in order to find the conditions to grow well ordered SiC films with improved quality with respect to more standard methods. To this aim, it is important to undernstand the early stages of the fullerene growth on Si surfaces and to compare SiC films obtained using different methods [1.2]. The C60/Si(111) system, though widely investigated, is still not well understood: a series of controversies are still open and up to now the best method to grow a well ordered SiC film on this surface is not yet found.
We report the thermal evolution of the electronic structure of C60 molecules adsorbed on the Si(111) surface and the electronic structure and morphology of thin SiC films grown on Si substrates using C60 as precursor. The measurements have been done by means of direct and inverse photoemission and X-ray absorption spectroscopies, low energy electron diffraction and atomic force microscopy. We used different deposition methods in order to control the order and the sp2 versus sp3 ratio obtained in the films.