FORMATION OF ELECTRICAL CONDUCTIVE HARD-CARBON (DLC) FILMS USING i-C₄H₁₀/N₂ SUPERMAGNETRON PLASMA

Haruhisa Kinoshita, Jun Takahashi and Takuya Hando Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

Electrical conductive hard-carbon (DLC) films were formed by using a supermagnetron plasma CVD method. Using mixed gas of isobutane (i-C₄H₁₀) and N₂, DLC films were deposited on thermally oxidized Si wafers, and film deposition rate, hardness and resistivity were measured. Two radio-frequency (rf) powers of the same frequency (13.56 MHz) with rf phase difference of 180 degrees were supplied to each electrode. The lowest resistivity of 1.7x10³ ohm-cm was observed at N₂ concentration of 70%, gas pressure of 50 mTorr, electrode temperature of 80 degrees C, and rf powers of 900 W/ 900W. In this case, measured film deposition rate and hardness were 2300 A/min (*A is angstrom) and 1700 kg/mm₂, respectively.