DEPENDENCY OF REACTIVE MAGNETRON SPUTTERED SiC FILM QUALITY ON THE DEPOSITION PARAMETERS.
A.Mahmood*, S. Muhl, L. Enrique, Sansores and E.Andrade**.Instituto de Investigaciones en Materiales, UNAM, Apartado Postal 670-360, México, D.F. 045110, México. **Instituto de Física, UNAM, Apartado Postal 670-360, México, D.F. 045110, México. *Estudiante de Doctorado de la Facultad de Ciencias, UNAM, México, D.F., 045110, México.
SiC thin films have been prepared by using the RF magnetron sputtering. The deposition parameters have been changed over a wide range to optimize the quality of the films; substrate temperature from 600-1000º C, Ar/CH4 composition from 80/20-50/50 and RF-Power 100-200 Watt. The samples have been characterized by X-Ray diffraction, Rutherdord backscattering, Perfilometry, FTIR spectroscopy and elipsometry. Results show that good quality silicon carbide films can be prepared by using RF-RMS technique.