EPITAXIAL GROWTH AND PROPERTIES OF OXIDE THIN FILMS

E. Baca, V. Holguín, M.E. Gómez, J. Osorio, M. Gómez and P. Prieto,

Departamento de Física, Universidad del Valle, A.A. 25360 Cali, Colombia.

Epitaxial deposition of the oxide films onto SrTiO3, MgO and LaAlO3 single-crystal (001) substrates was carried out by a high oxygen pressure dc-rf-sputtering technique. We report on the growth of epitaxial Y-123, Ho-123, BaKBiO, Bi-2212, Bi-221xYl-x2 (0< x£ 0), Pr-123, Y203, and SrTi03 thin films, addressing to study theirs physical properties which are relevant for multilayer deposition processes. Stoichiometric sintered targets were used as sputtering sources, and the films were deposited on substrates heated at high temperatures. The structural properties has been analyzed by Transmission Electron Microscopy TEM, X-ray diffraction, Rutherford Backscattering, RBS and Atomic Force Microscopy, AFM. Electrical, magnetic and superconducting properties have been determined by resistivity, susceptibility and tunneling measurements. The high sputtering method is very suitable for the deposition of high epitaxial oxide thin films and multilayers.

This work has been supported by COLCIENCIAS under contracts No. 1106-05-197-95 and 361-97.