DEPOSIT AND CHARACTERIZATION OF NON-STOICHIOMETRIC PMN-PT THIN FILMS.

A. Fundora1,3, J. M. Siqueiros1,2 , J. Portelles3.

1Centro de Investigación Científica y de Educación Superior de Ensenada, Apdo. Postal 2732, Ensenada, B. Cfa. 228800.

2Centro de Ciencias de la Materia Condensada, UNAM, Apdo. Postal 2681, Ensenada, B. Cfa. 228800.

3Facultad de Física-IMRE, Universidad de la Habana, San Lázaro y L, Vedado, La Habana 10400, Cuba.

The non-stoichiometric system Pb[(Mg1/3Nb2/3)2.7Ti0.1]O3 (PMN-PT) is classified as a relaxor ferroelectric material, paraelectric at room temperature. Ceramics of this compound were used as targets to produce thin films by pulsed laser deposition (PLD). A KrF excimer laser with l = 248 nm, a fluence of 2 J/cm2 and 10 Hz repetition rate was used for the deposits on RuO2/SiO2/Si substrates. Well adhered and thickness uniform films were obtained showing no evidence of crystallinity as deposited. X-ray Diffraction studies showed the development of microcrystalline structure with annealing starting at 500ºC, evidenced also by scanning electron microscopy (SEM). Finally, a correlation between the measured dielectric properties of the films and their microstructure is made.

This work was partially supported by CoNaCyT, proy. No. 26314E and DGAPA-UNAM Proy. No. IN115098. Thanks are due to I. Gradilla, F. Ruiz, G. Vilchis and E. Aparicio for their technical help.