Toshihiro Miyata, Toshikuni Nakatani and Tadatsugu Minami

Electron Device System Laboratory, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan.

The luminiscent properties of Mn-actived Ga₂O₃ (Ga₂O₃:Mn)thin films prepared using various deposition methods were investigated. The Ga₂O₃:Mn thin films were prepared using physical methods such as magnetron sputtering and metalorganic molecular beam deposition techniques at a substrate temperature up to 600ºC or chemical methods such as solution coating and son-gel techniques with a heat treatment at 600-950ºC. The relationship between PL characteristics and crystallographical properties was investigated for as-deposited and postannealed Ga₂O₃:Mn thin tilms prepared by various deposition techniques. In addition, EL characteristics were measured in thin-film electroluminiscent (TFEL) devices with the Ga₂O₃:Mn thin films as the emitting layer. A luminance as high as 500cd/m² was obtained in green emitting TFEL devices using Ga₂O₃:Mn thin films possstannealed above 1000ºC and driven at ikHz, regardless of deposition techniques. The crystallographical properties of Ga₂O₃:Mn thin-film emitting layers were dependent on both deposition technique and deposition conditions. The crystallized Ga₂O₃:Mn thin-film emitting layers were always identified as b -Ga₂O₃. The PL and EL characteristics were correlated to the crystallographical properties.