R. Castro-Rodríguez^a, and J.L. Peña^a,b

aApplied Physics Department, CINVESTAV-IPN Mérida, C.P. 97310, Mérida Yucatán, México, ^bCICATA-IPN, Legaria 694 Col. Irrigación, C.P. 11500, México, D.F.

Polycrystalline CdTe In films were prepared using close-spaced vapor transport technique combined with free evaporation (CSVT FE), and the stoichiometry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration in the films increased according to the rise of temperature of the In source. X-ray diffraction analysis allowed to identify the CdTe (a -phase) in all films, together with the CdIn₂Te₄(b -phase) in the films grown at the highest temperatures of the indium source. For indium low-concentration films, the lattice parameter decreased linearly with the molar percent of In₂Te₃ in CdTe (below of 5 mol %). This behavior corroborated the presence of the (CdTe)_1-x(In₂Te₃)_x pseudo-binary.