C.K. Chung, T.H. Jaw and D.S. Wuu

Microsystems Laboratory, Industrial Technology Research Institute,

Chutung, Hsinchu, Taiwan 310, R.O.C.

A epitaxial Ir-silicide film was grown on the top of p-Si(100) substrate at high temperature of 450 °C in ultra high vacuum. The epitaxial Ir-silicide film was identified to be Ir₃Si₄ with four types of epitaxial modes. The average Schottky barrier height of the epitaxial Ir₃Si₄/p-Si(100) diode at 60- 100K was determined to be 0.177 eV with an ideality factor of 1.12. In contrast, a polycrytalline IrSi/p-Si(100) diode was formed by conventional room-temperature deposition and annealing at high temperatures, and its average Schottky barrier height was 0.157 eV with an ideality factor of 1.08. The difference in Schottky barrier height was attributed to the difference of phase composition and microstructure between Ir₃Si₄ and IrSi silicides.