| Amorphous
silicon alloys - the optoelectronic materials that set the trend for photovoltaic
applications |
1
|
| Stanford
R. Ovshinsky and Jeffrey C. Yang |
|
| Growth
and characterization of ternary and quaternary wide gap II-VI quantum wells
and nanostructures |
6
|
| H.
Sitter |
|
| New
processing technique for optoelectronic devices with low-dimensional quantum
structures |
13
|
| Yoshifumi
Katayama |
| The
growth, structure and surface chemistry of oxide films as model catalysts |
18
|
| C.
H. F. Peden, G. S. Herman, I. Z. Ismagilov, M. A. Henderson, Y. J. Kim
and S. A. Chambers |
|
| Monitoring
of silicon nitride films grown by PLD using real time single photon-energy
ellipsometry |
25
|
| G.
Soto, R. Machorro, E. C. Sámano, J. Siqueiros, and L. Cota-Araiza. |
| Initial
molecular beam epitaxial growth of ZnSe on Si substrates |
29
|
| V.
H. Méndez-García, M. López-López, V. M. Altuzar-Aguilar
and I. Hernández-Calderón. |
|
| Epitaxial
CdSe thin films grown by a modified closed space isothermal vapor phase
technique using two elemental sources |
34
|
| H.
Rodríguez, O. de Melo |
|
| Excitons
in II-VI quantum wells |
36
|
| A.Camacho
and R. Ordoñez |
|
| Top
valence bands in ZnSe based ternaries: bulk and 001-surfaces |
41
|
| A.Camacho |
|
| Post-deposit
annealing of ITO films produced by r.f. magnetron sputtering |
47
|
| M.
Cruz-Jáuregui, J. M. Siqueiros, R. Machorro and S. Wang |
|
| Photoluminescence
study of GaAs homoepitaxial structures with different in situ substrate
surface cleaning processes |
51
|
| Javier
Luyo-Alvarado, Miguel Meléndez-Lira, Máximo López-López
and Shigeo Goto |
|
| Thermal
diffusitivity measurements in solids by means of the phase analysis of
the photoacustic signal |
55
|
| A.Calderón
, R. A. Muñoz Hernández, F. Sánchez Sinencio, A. C.
Orea and S.A. Tomás |
|
| Estudio
fotoacústico de los procesos de mojado y de evaporación de
un líquido en un medio poroso |
59
|
| R.
Bernal, F.J. Espinoza-Beltrán, R. Ramírez-Bon, and S. Sakerj-Zenkovitch |
|
| Espectroscopía
fotoacústica de polvos y películas de Cu-Si02
preparado por Sol-Gel, oxidado y posteriormente reducido en atmósfera
de CO |
65
|
| R.
Bernal, J. Manzanares-Martínez, F.J. Espinoza-Beltrán, R.
Ramírez-Bon, F. J. García-Rodríguez, C. Cruz-Vázquez,
J. F. Pérez, Y. V. Vorobiev y J. González Hernández |
|
| Determinación
de los indices de refracción del GaSb mediante elipsometría
y un prisma |
70
|
| M.
Muñoz Uribe, J. G. Mendoza-alvarez, C.E.M. de Oliveira, M. B. Zakia,
y N. B. Patel |
|
| Estudio
comparativo de las propiedades ferroeléctricas relajadoras de los
sistemas PMN-PT estequiométricos y no estequiométricos |
75
|
| Abel
Fundora Cruz, Jorge J. Portelles Rodríguez, Gustavo A. Hirata y
Jesús M. Siqueiros |
|
| Percolación
eléctrica en compositos: epóxica-grafito planar |
82
|
| C.D.
Gutiérrez, P.J. Mendoza, O. Zelaya-Angel and M. E. Rodríguez |
|