20Congreso Nacional 
Sociedad Mexicana de Ciencia de Superficies y Vacío A.C.

Reflectance-Difference Spectroscopy: characterization of electric fields and dislocation strains in zincblende semiconductors

A. Lastras-Martínez and L.F. Lastras-Martínez
Instituto de Investigación en Comunicación Optica
Universidad Autónoma de San Luis Potosí, México

Reflectance-Difference Spectroscopy  (RDS) has emerged in the past decade as a sensitive optical probe for the characterization of cubic semiconductors. RDS measures the difference in optical reflectivity between two mutually orthogonal polarizations and it is thus sensitive to the breakdown of cubic symmetry that commonly occur in the neighborhood of a surface or interface. Among the applications of RDS we can mention: the in situ, real time, monitoring of the epitaxial growth of III-V films,  the determination of doping levels  and deformation potentials in zincblende semiconductors,  and the characterization of semiconductor surface strains.  In this talk we discuss the application of RDS to the determination of surface electric field strengths, as well as to the characterization of dislocations in zincblende semiconductors. It will be shown that both electric fields and dislocations introduce strains that reduce the zincblende symmetry and thus render the semiconductor anisotropic. We will present physical models for the RDS line shape that allow us to associate the spectrum amplitude to either electric field strength or dislocation density.


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