20Congreso Nacional 
Sociedad Mexicana de Ciencia de Superficies y Vacío A.C.

Alloys and compounds in the C-Si-Ge system

John Kouvetakis
Department of Chemistry
Arizona State University, USA
Tempe, Arizona, 85287-1604

Recent developments in molecular inorganic chemistry to prepare  new group IVsemiconductors which are intended for Si based bandgap engineering and lattice matching will be described.  These materials are created heteroepitaxially on Si and include diamond-structured alloys and strain stabilized ordered phases in the Si-Ge-C system.  Examples of new compound semiconductors include the Si4C,Ge4C,and (Si2Ge)Cx compositions with diamond-cubic structures and the Si3GeC4 phase with a sphalerite-like structure.  Random alloy systems include silicon-germanium solid solutions with dissolved carbon (Si1-x-yGexCy) monocrystalline and nanostructured (quantum dots and  wires)  Ge1-xCx hybrids of Ge and C and related Si1-xCx materials.  The presentation emphasizes an approach that combines novel precursor chemistries and modern deposition techniques (ultrahigh vacuum chemical vapor deposition) to develop thin films of new inorganic materials.

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