20Congreso Nacional 
Sociedad Mexicana de Ciencia de Superficies y Vacío A.C.

Atomic Layer Epitaxy by Isothermal Closed Space Sublimation

O. de Melo Pereira
Physics Faculty, University of Havana, 10 400 La Habana

A novel and low cost technique has been applied for the epitaxial growth of II-VI semiconductor films on (100) GaAs substrates. A substrate of GaAs(100) is exposed to Zn and Te elemental sources alternatively. The whole system is at the same temperature (380 oC), for that reason the only driving force for the film growth is the compositional difference between the elemental source and the substrate or the previously grown film surface. ZnTe films obtained by this procedure were epitaxial as reveled from x- Rays measurements and shown mirror like surfaces. Measurements of the thickness using reflectance spectroscopy, ellipsometry and Transmission Electron Microscopy led to a growth rate of 1 monolayer (ML) per cycle. The results for epitaxial CdTe compound and CdxZn1-xTe alloys are also presented. In the case of CdTe, the growth rate was observed to be 0.5 ML per cycle. Several different composition of CdxZn1-xTe were obtained by changing the cycles sequence.


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