20Congreso Nacional 
Sociedad Mexicana de Ciencia de Superficies y Vacío A.C.

Hydrogen co-doping in III-V semiconductors; its incorporation, dopant neutralization and reactivation kinetics of carbon in MOCVD-C:GaAs.

Jaime Mimila-Arroyo
Centro de Investigación y de Estudios Avanzados del IPN.
Av. Instituto Politécnico Nacional No 2508. México, D.F., CP 07300. MEXICO

Hydrogen in crystalline semiconductors has proved to be a particular electrically active impurity. Chemical and electrical interaction of hydrogen with lattice point defects and impurities, might produce an important modification on their physical behavior, changing some physical properties of the semiconductor. Hydrogen co-doping of a semiconducting material influences, of course, device performance as well. Moreover, as hydrogen chemical interaction with other impurities involves relatively low bonding energies, its presence can produce unacceptable device characteristics evolution with operation time. The higher the power handled by the device the more often the disturbing device evolution is seen. In this presentation we will, briefly review the effects of hydrogen co-doping on the properties of III-V crystalline semiconductors. Then, we will discuss the driving force behind that makes hydrogen systematically to get incorporated in carbon doped GaAs, grown by either MOCVD or MOMBE. Hydrogen co-doping of GaAs:C results in partial or complete neutralization of the carbon. In a second part, a detailed model on the carbon reactivation kinetics, carbon doping efficiency and carbon-hydrogen complexes behavior in MOCVD-GaAs epitaxial layers will be presented. Finally, we will discuss the probable relation between the beta evolution of the high frequency and high power n-GaInP/p-GaAs/n-GaAs hetero-junction bipolar transistor (HBT), and the hydrogen co-doping of the C:GaAs, constituting its base.

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